The quantum anomalous Hall effect in magnetic topological insulators has potential for use in quantum resistance metrology applications.
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015). In 1879, Edwin H. Hall discovered that when a conductor carrying longitudinal current was placed in a vertical magnetic field, the carrier would be pressed to against the transverse side of the conductor, which led to the observed …
B. Zhou, H. Yang, and Y.-H. Zhang, Fractional Quantum Anomalous Hall Effects in Rhombohedral Multilayer Graphene in the Moiréless Limit and in Coulomb Imprinted Superlattice, Fractional quantum anomalous Hall effects in rhombohedral multilayer graphene in the moiréless limit and in Coulomb imprinted superlattice arXiv:2311.04217.
The quantum Hall (QH) effect refers to quantization of the Hall conductance of a material at integer multiples of e 2 / h superscript 𝑒 2 ℎ e^{2}/h, a value that is dependent only on two fundamental physical constants, the electron charge e 𝑒 e and the Planck constant h ℎ h. Precision QH effect measurements currently achieve deviations from exact quantization of 1 part in 10 10 ...
The ordinary and quantum Hall effects with fixed carrier types, electron or hole, exhibit well-defined chirality under external magnetic fields, but the analogous chirality of the quantum anomalous Hall effect (QAHE) remains little explored. Here, for the electronic structures of intrinsic QAHE systems, we show that the local Berry curvature is linked with the angular …
Photonic Anomalous Quantum Hall Effect Sunil Mittal,1,2, Venkata Vikram Orre,1,2 Daniel Leykam,3 Y. D. Chong,4,5 and Mohammad Hafezi1,2,6 1Joint Quantum Institute, NIST/University of Maryland, College Park, MD 20742, USA 2Department of Electrical and Computer Engineering, and IREAP, University of Maryland, College Park, MD 20742, USA …
An electric-field-induced topological phase transition from a Mott insulator to a quantum anomalous Hall insulator in near-60-degree-twisted (or AB-stacked) MoTe2/WSe2 heterobilayers is reported.
The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. ...
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon that features quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene-monolayer …
Electrons in metals can show a giant anomalous Hall effect (AHE) when interacting with characteristic spin texture. The AHE has been discussed in terms of scalar-spin-chirality (SSC) in long-range ...
Quantum anomalous Hall effect—the appearance of quantized Hall conductance at zero magnetic field—has been observed in thin films of the topological insulator Bi 2 Se 3 doped with magnetic atoms. The doping, however, introduces …
Abstract page for arXiv paper 1509.05507: From Anomalous Hall Effect to the Quantum Anomalous Hall Effect A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
5 · The quantum anomalous Hall effect and strong robustness in two-dimensional p-state Dirac half-metals Y 3 X 2 (Y = Li, Na; X = Se, Te) Ao Du, a Yanghao Tang, a Long Kuang, a Shi Qiu, a Ting Yang, a Jinming Cai * ab and Cuixia Yan * …
Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb) 2 Te 3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall …
We propose a new family of the orbital (= K, Rb, Cs; = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). The CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting.
The quantum anomalous Hall effect is defined as a quantized Hall effect realized in a system without an external magnetic field. The quantum anomalous Hall effect is a novel manifestation of topological structure in many-electron systems and may have potential applications in future electronic devices. In recent years, the quantum anomalous Hall effect was proposed …
Quantum anomalous Hall (QAH) effect shows chiral edge states with topological protection . 3 against local perturbations, which can be characterized by quantized Hall conductance with zero longitudinal conductance.1,2 Since it provides dissipationless chiral channels for
The concept of the fractional quantum anomalous Hall effect in flat band systems has been theoretically proposed for over a decade (29–32). In recent times, within the graphene ( 33 – …
Layer Hall effect (LHE), initially discovered in the magnetic topological insulator MnBi2Te4 film, expands the Hall effect family and opens a promising avenue for layertronics applications. In ...
In such heterostructures, we observe a signature of the quantum anomalous Hall (QAH) effect and realize current-induced magnetization switching. These results would open a way for electrically switching of the QAH effect. ... The anomalous Hall effect is significantly enhanced compared to CGT-based heterostructure, ...
The integer quantum anomalous Hall (QAH) effect is a lattice analogue of the quantum Hall effect at zero magnetic field 1,2,3.This phenomenon occurs in systems with topologically non-trivial bands ...
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and …
The discovery of the quantum Hall effect (QHE) in 1980 brought together the fields of topology and condensed-matter to provide a new understanding of electrons in quantum materials.
The quantum anomalous Hall effect is defined as a quantized Ha ll effect realized in a system without external magnetic field. Quantum anomalous Hall effect is a novel mani festation of topological structure in many-electron systems, and may have potential applications in future electronic devices. In recent years, quantum
The fractional quantum anomalous Hall effect (FQAHE), the analogue of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking2,3,4,5,6. The demonstration of FQAHE could lead to non-Abelian anyons that form the basis of topological quantum computation7,8,9.
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern …
5 · The non-zero Chern number and the presence of edge states further confirm that the Li 3 Te 2 monolayer is a room-temperature ferromagnetic material and a quantum anomalous …
